The specific electrical resistance of undoped diamond at room temperature is about 10 times greater than that of single crystal pure silicon because of diamond's wide band gap (5.45 eV between the valence band and the conduction band). Several years ago, doping with accepter atoms (for example boron) for p-type diamond was mastered. Whereas the production of n-type diamond still represents a challenge. At low doping levels, the charge carrier mobility in diamond is 2200 cm2/Vs for electrons and 1600 cm2/Vs for holes. These values are, respectively, about 1.5 and 2.7 times larger than in silicon.